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| BCV27, BCV47 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 (PNP) 3 Type BCV27 BCV47 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 2 1 VPS05161 Marking FFs FGs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BCV27 30 40 10 BCV47 60 80 10 Unit V IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 360 150 -65 ... 150 mA mA mW C 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at T A = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 100 A, IB = 0 Emitter-base breakdown voltage I E = 10 A, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 VCB = 60 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , T A = 150 C VCB = 60 V, I E = 0 , T A = 150 C Emitter cutoff current VEB = 4 V, I C = 0 DC current gain 1) I C = 100 A, V CE = 1 V DC current gain 1) I C = 10 mA, VCE = 5 V DC current gain 1) I C = 100 mA, V CE = 5 V DC current gain 1) I C = 0.5 A, V CE = 5 V BCV27 BCV47 1) Pulse test: t 300s, D = 2% Unit max. V typ. V (BR)CEO BCV27 BCV47 V (BR)CBO BCV27 BCV47 V (BR)EBO I CBO BCV27 BCV47 I CBO BCV27 BCV47 I EBO hFE BCV27 BCV47 hFE BCV27 BCV47 hFE BCV27 BCV47 hFE 4000 2000 20000 10000 10000 4000 4000 2000 10 10 100 100 100 40 80 10 30 60 - nA A nA - 2 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3.5 fT 170 VBEsat 1.5 VCEsat 1 typ. max. Unit V MHz pF 1) Pulse test: t 300s, D = 2% 3 Jul-12-2001 BCV27, BCV47 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BCV 27/47 EHP00300 400 10 CEB0 (CCB0 ) pF mW 300 P tot 250 CCB0 200 5 CEB0 150 100 50 0 0 15 30 45 60 75 90 105 120 C 150 TS 0 10 -1 10 0 V 10 1 V EB0 (V CB0 ) Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCV 27/47 EHP00301 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT T BCV 27/47 EHP00303 tp D= T tp 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 10 1 10 2 mA 10 3 C 4 Jul-12-2001 BCV27, BCV47 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 1000 10 3 BCV 27/47 EHP00304 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 1000 10 3 BCV 27/47 EHP00305 C mA 150 C 25 C -50 C C mA 150 C 25 C -50 C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 1.0 2.0 V V BEsat 3.0 10 0 0 0.5 1.0 V V CEsat 1.5 Collector cutoff current ICBO = f (TA ) VCB = VCEmax 10 4 nA BCV 27/47 EHP00306 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 BCV 27/47 EHP00307 CBO 10 3 max 10 5 5 10 2 125 C 25 C -55 C typ 10 4 5 10 1 10 0 0 50 100 C TA 150 10 3 10 -1 10 0 10 1 10 2 mA 10 3 C 5 Jul-12-2001 |
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